The value of this book lies in its direct focus on actual mass production technologies since 2010, and it greatly bridges the knowledge gap between fundamental physics and advanced 3D component manufacturing processes. This book is not only a textbook for many university electrical engineering and materials science departments, but also a crucial reference book for semiconductor engineers entering the workforce. 

本書在台灣半導體學術界與產業人才培訓中具有重要地位，在現代半導體學界與前瞻研發領域具有極高的指標性與重要性。有別於許多早期側重於單一基礎模組（如傳統微影、蝕刻）的教科書，本書的價值在於它直接切入 2010 年以後的實際量產技術，並極大程度地填補了基礎物理與先進三維元件製程之間的知識斷層。這本書不僅是許多大學電機、材料相關系所的教科書，更是半導體工程師進入職場後的關鍵工具書。 

The core value of this book lies in its departure from the complex examples provided by original manufacturers, instead using the research team's years of practical teaching and forward-looking research findings as examples. Based entirely on the industry-leading Synopsys Sentaurus TCAD (v.2014) software, the book guides readers to a deep understanding of how to perform physical and electrical simulation analysis of advanced nanodevices using 3D computer-aided design (TCAD) technology. It is highly suitable for master's and doctoral students, industry engineers, and experts engaged in semiconductor nanodevice R&D.

📘 Core Chapter Structure of the Book

The chapters of this book closely follow the evolution of modern semiconductor devices, covering everything from traditional planar transistors to the most advanced 3nm process nodes:

1. Introduction to Semiconductor Device Design and Simulation

2. Two-Dimensional Simulation and Analysis of Metal-Oxide-Semiconductor Field-Effect Transistors

3. Simulation and Analysis of Three-Dimensional FinFETs (Lg = 15 nm)

4. Simulation and Analysis of Inverters and Static Random Access Memory (SRAM of 3D FinFET, Lg = 15 nm)

5. Simulation and Analysis of Gate-All-Around-Area (GAA) NWFETs

6. Junctionless FETs (JL-FETs) (Lg = 10 nm, N10)

7. Tunnel FETs

8. Simulation of Lg = 3 nm FinFETs and Ultra-Thin Active Layer Transistors

• Appendix: Synopsys Sentaurus TCAD Software Installation and Environment Setup

這本書的核心價值在於跳脫原廠繁複的範例，改以研究團隊多年的實務教學與前瞻研究成果為範例。全書基於業界主流的 Synopsys Sentaurus TCAD (v.2014) 軟體，帶領讀者深入理解如何透過 3D 技術電腦輔助設計（TCAD）進行先進奈米元件的物性與電性模擬分析，非常適合從事半導體奈米元件研發的碩博士生、產業界工程師及專家修習。

📘 書籍核心章節架構

本書的章節設計緊跟現代半導體元件的演進軌跡，涵蓋了從傳統平面到當前最前瞻的 3 奈米製程節點：

1. 半導體元件設計及模擬導論

2. 金氧半場效應電晶體之二維模擬與分析

3. 三維鰭式場效電晶體 (3D FinFET, Lg = 15 nm) 模擬分析

4. 反相器 (Inverter) 和靜態隨機存取記憶體 (SRAM of 3D FinFET, Lg = 15 nm) 模擬分析

5. 環繞式閘極奈米線電晶體 (GAA NWFET) 之模擬與分析

6. 無接面場效電晶體 Junctionless FET (JL-FET) (Lg = 10 nm, N10)

7. 穿隧式場效應電晶體 (Tunnel FET)

8. Lg = 3 nm 鰭式電晶體與超薄主動層電晶體之模擬

• 附錄： Synopsys Sentaurus TCAD 軟體安裝以及環境設定